 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| PZT3904 NPN Silicon Switching Transistor High DC current gain: 0.1mA to 100mA Low collector-emitter saturation voltage Complementary type: PZT3906 (PNP) 4 3 2 1 VPS05163 Type PZT3904 Maximum Ratings Parameter Marking ZT 3904 1=B Pin Configuration 2=C 3=E 4=C Package SOT223 Symbol VCEO VCBO VEBO IC Ptot Tj Tstg Value 40 60 6 200 1.5 150 -65 ... 150 Unit V Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Total power dissipation, TS = 72 C Junction temperature Storage temperature mA W C Thermal Resistance Junction - soldering point 1) RthJS 52 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Nov-30-2001 PZT3904 Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-base breakdown voltage IC = 10 A, IE = 0 Emitter-base breakdown voltage IE = 10 A, IC = 0 Collector cutoff current VCB = 30 V, IE = 0 ICBO ICEV IBEV hFE V(BR)EBO V(BR)CBO V(BR)CEO typ. max. Unit 40 60 6 - - 50 50 50 V nA Collector-emitter cutoff current VCE = 30 V, -VBE = 0.5 V Base-emitter cutoff current VCE = 30 V, -VBE = 0.5 DC current gain 1) IC = 0.1 mA, VCE = 1 V IC = 1 mA, VCE = 1 V IC = 10 mA, VCE = 1 V IC = 50 mA, VCE = 1 V IC = 100 mA, VCE = 1 V Collector-emitter saturation voltage1) IC = 10 mA, IB = 1 mA IC = 50 mA, IB = 5 mA Base-emitter saturation voltage 1) IC = 100 mA, IB = 1 mA IC = 50 mA, IB = 5 mA 40 70 100 60 30 300 V 0.2 0.3 0.85 0.9 VCEsat VBEsat - 1) Pulse test: t =300s, D = 2% 2 Nov-30-2001 PZT3904 Electrical Characteristics at TA = 25C, unless otherwise specified. Symbol Values Parameter min. AC Characteristics Transition frequency IC = 10 mA, VCE = 20 V, f = 100 MHz Collector-base capacitance VCB = 5 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure IC = 100 A, VCE = 5 V, RS = 1 k, f = 10Hz to 15.7kHz, Short-circuit input impedance IC = 1 mA, VCE = 10 V, f = 1 kHz Open-circuit reverse voltage transf.ratio IC = 1 mA, VCE = 10 V, f = 1 kHz Short-circuit forward current transf.ratio IC = 1 mA, VCE = 10 V, f = 1 kHz IC = 1 mA, VCE = 10 V, f = 1 kHz Delay time VCC = 3 V, IC = 10 mA, IB1 = 1 mA, VBE(off) = 0.5 V Rise time VCC = 3 V, IC = 10 mA, IB1 = 1 mA, VBE(off) = 0.5 V Storage time VCC = 3 V, IC = 10 mA, IB1=IB2 = 1mA Fall time VCC = 3 V, IC = 10 mA, IB1=IB2 = 1mA tf 50 tstg 200 tr 35 td 35 Open-circuit output admittance h21e h22e 100 1 400 40 h12e 0.5 8 h11e 1 10 F 5 Ceb 8 Ccb 4 fT 300 typ. max. Unit MHz pF dB k 10-4 S ns 3 Nov-30-2001 PZT3904 Test circuits Delay and rise time +3.0 V 300 ns D = 2% +10.9 V 0 10 k -0.5 V 275 C <4.0 pF <1.0 ns EHN00061 Storage and fall time +3.0 V t1 10 < t 1 < 500 s D = 2% +10.9 V 0 10 k 275 C 1N916 <4.0 pF -9.1 V <1.0 ns EHN00062 4 Nov-30-2001 PZT3904 Total power dissipation Ptot = f(TS) Saturation voltage IC = f (VBEsat, VCEsat) h FE = 10 2 mA PZT 3904 EHP00711 1650 mW 1350 1200 C 10 2 5 V CE V BE P tot 1050 900 750 600 10 1 5 450 300 150 0 0 15 30 45 60 75 90 105 120 C 150 TS 10 0 0 0.2 0.4 0.6 0.8 1.0 V 1.2 VBE sat , VCE sat Permissible pulse load Ptotmax / PtotDC = f (tp ) PZT 3904 EHP00293 DC current gain hFE = f (I C) VCE = 10V, normalized 10 1 PZT 3904 EHP00712 5 Ptot max Ptot DC 10 2 5 D= tp T tp h FE T 5 10 1 5 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 125 C 10 0 25 C -55 C 5 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 tp s 10 0 10 -1 -1 10 5 10 0 5 10 1 mA 10 2 C 5 Nov-30-2001 |
Price & Availability of PZT3904
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |